F6N60 Datasheet - Suntac

F6N60 IRF6N60

This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers.

F6N60 Features

* Robust High Voltage Termination Avalanche Energy Specified Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circuits IDSS Specified at Elevated Temperature IRF6N60 PIN CONFIGURATION TO-220/TO-220FP SYMBOL D Front View

F6N60 Datasheet (231.29 KB)