F6N60 IRF6N60

Suntac

F6N60 Description

! GENERAL .
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time.

F6N60 Features

* Robust High Voltage Termination Avalanche Energy Specified Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circuits IDSS Specified at Elevated Temperature IRF6N60 PIN CONFIGURATION TO-220/TO-220FP SYMBOL D Front View

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Datasheet Details

Part number: F6N60
Manufacturer: Suntac
File Size: 231.29 KB
Datasheet: F6N60-Suntac.pdf
Description: IRF6N60

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IRF6N60 Suntac

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