FERD20H100S Datasheet - STMicroelectronics

FERD20H100S 100V field-effect rectifier diode

The device is based on a proprietary technology that achieves the best in class VF/IR trade-off for a given silicon surface. This 100 V rectifier has been optimized for use in confined casing applications where both efficiency and thermal performance matter. With a lower dependency of leakage curren.

FERD20H100S Features

* ST advanced rectifier process

* Stable leakage current over reverse voltage

* Reduced leakage current

* Low forward voltage drop

* High frequency operation

* Insulated package TO-220FPAB:

* Insulated voltage: 2000 VRMS sine

* ECOPACK2

FERD20H100S-STMicroelectronics.pdf