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FERD30H100S 100V field-effect rectifier diode

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Description

FERD30H100S 100 V field-effect rectifier diode Datasheet - production data A K KA K A K A TO-220AB A KA K IPAK KA A DPAK .
The device is based on a proprietary technology that achieves the best in class VF/IR trade-off for a given silicon surface.

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Features

* ST advanced rectifier process
* Stable leakage current over reverse voltage
* Reduced leakage current
* Low forward voltage drop

Applications

* where both efficiency and thermal performance are key. With a lower dependency of leakage current (IR) and forward voltage (VF) in function of temperature, the thermal runaway risk is reduced. It is highly recommended to be used in adapters and chargers. Table 1: Device summary Symbol Value IF(A

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