G10M65DF2 Datasheet - STMicroelectronics

G10M65DF2, Trench gate field-stop IGBT

STGB10M65DF2 Trench gate field-stop IGBT, M series 650 V, 10 A low-loss in D²PAK package Datasheet - production data TAB 2 3 1 D²PAK Figure 1: Inter.
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure.

Features

* 6 µs of short-circuit withstand time
* VCE(sat) = 1.55 V (typ. ) @ IC = 10 A
* Tight parameter distribution
* Safer paralleling
* Positive VCE(sat) temperature coefficient
* Low thermal resistance
* Soft and very fast recovery antiparallel diode
* Maximum junction te

Applications

* Motor control
* UPS
* PFC

G10M65DF2-STMicroelectronics.pdf