G10M65DF2 Datasheet, Igbt, STMicroelectronics

✔ G10M65DF2 Features

6 µs of short-circuit withstand time
VCE(sat) = 1.55 V (typ.) @ IC = 10 A
Tight parameter distribution
Safer paralleling
Positive VCE(sat) temperature coefficie

✔ G10M65DF2 Application

Motor control
UPS
PFC
General purpose inverter Order code STGB10M65DF2 Description This device is

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G10M65DF2

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📄 Datasheet

Description:

Trench gate field-stop igbt. This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series I

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G10M65DF2 Trench gate field-stop IGBT STMicroelectronics