G10M65DF2

Trench gate field-stop IGBT

STMicroelectronics

Download Datasheet (943.40 KB)

G10M65DF2 Datasheet Preview — Preview of G10M65DF2 Datasheet

Datasheet Details

Part number:

G10M65DF2

Manufacturer:

STMicroelectronics ↗

File Size:

943.40 KB

Download:

📥 G10M65DF2 Datasheet PDF

Description:

Trench gate field-stop igbt.
STGB10M65DF2 Trench gate field-stop IGBT, M series 650 V, 10 A low-loss in D²PAK package Datasheet .
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The.

✔ G10M65DF2 Features

6 µs of short-circuit withstand time
VCE(sat) = 1.55 V (typ.) @ IC = 10 A
Tight parameter distribution
Safer paralleling
Positive VCE(sat) temperature coefficie

✔ G10M65DF2 Application

Motor control
UPS
PFC
General purpose inverter Order code STGB10M65DF2 Description This device is

📁 Related Datasheet

G1000LL250 - Anode-Shorted Gate Turn-Off Thyristor (IXYS)

G1000LM250 - Anode-Shorted Gate Turn-Off Thyristor (IXYS)

G1000NC450 - Anode Shorted Gate Turn-Off Thyristor (IXYS)

G1000NL450 - Anode Shorted Gate Turn-Off Thyristor (IXYS)

G1000QC250 - Anode Shorted Gate Turn-Off Thyristor (IXYS)

G1000QC400 - Anode Shorted Gate Turn-Off Thyristor (IXYS)

G1000QC450 - Anode Shorted Gate Turn-Off Thyristor (IXYS)

G1002 - N-Channel Enhancement Mode Power MOSFET (GOFORD)

TAGS

G10M65DF2 Trench gate field-stop IGBT STMicroelectronics