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G10M65DF2 - Trench gate field-stop IGBT

STMicroelectronics

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Datasheet Details

Part number: G10M65DF2
Manufacturer: STMicroelectronics ↗
File Size: 943.40 KB
Datasheet: G10M65DF2-STMicroelectronics.pdf
Description: Trench gate field-stop IGBT

G10M65DF2 Product details

Description

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure.

Features

6 µs of short-circuit withstand time.
VCE(sat) = 1.55 V (typ. ) @ IC = 10 A.
Tight parameter distribution.
Safer paralleling.
Positive VCE(sat) temperature coefficient.
Low thermal resistance.
Soft and very fast recovery antiparallel diode.
Maximum junction temperature: TJ = 175 °C.

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