G10M65DF2 Datasheet - STMicroelectronics

Trench gate field-stop IGBT

G10M65DF2 Features

* 6 µs of short-circuit withstand time

* VCE(sat) = 1.55 V (typ.) @ IC = 10 A

* Tight parameter distribution

* Safer paralleling

* Positive VCE(sat) temperature coefficient

* Low thermal resistance

* Soft and very fast recovery antiparallel diode

* Maximum junction te

G10M65DF2 General Description

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, .

G10M65DF2 Datasheet (943.40 KB)

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Datasheet Details

Part number:

G10M65DF2

Manufacturer:

STMicroelectronics ↗

File Size:

943.40 KB

Description:

Trench gate field-stop igbt.
STGB10M65DF2 Trench gate field-stop IGBT, M series 650 V, 10 A low-loss in D²PAK package Datasheet - production data TAB 2 3 1 D²PAK Figure 1: Inter.

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G10M65DF2 Trench gate field-stop IGBT STMicroelectronics

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G10M65DF2 Features

G10M65DF2 General Description

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