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GB20V60DF Datasheet - STMicroelectronics

GB20V60DF IGBT

This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. The device is part of the "V" series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of ver.

GB20V60DF Features

* Maximum junction temperature: TJ = 175 °C

* Very high speed switching series

* Tail-less switching off

* Low saturation voltage: VCE(sat) = 1.8 V (typ.) @ IC = 20 A

* Tight parameters distribution

* Safe paralleling

* Low thermal resistance

GB20V60DF Datasheet (2.01 MB)

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Datasheet Details

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Stock and price

Distributor
Littelfuse Inc
SZ1.5SMC6.8AT3G
965 In Stock
Qty : 500 units
Unit Price : $0.26

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GB20V60DF IGBT STMicroelectronics

GB20V60DF Distributor