GB20V60DF Datasheet - STMicroelectronics

GB20V60DF, IGBT

STGB20V60DF, STGP20V60DF, STGW20V60DF, STGWT20V60DF 600 V, 20 A very high speed trench gate field-stop IGBT Datasheet - production data TAB TAB 3 .
This device is an IGBT developed using an advanced proprietary trench gate and field stop structure.

Features

* Maximum junction temperature: TJ = 175 °C
* Very high speed switching series
* Tail-less switching off
* Low saturation voltage: VCE(sat) = 1.8 V (typ. ) @ IC = 20 A
* Tight parameters distribution
* Safe paralleling
* Low thermal resistance

Applications

* Photovoltaic inverters
* Uninterruptible power supply
* Welding
* Power factor correction

GB20V60DF-STMicroelectronics.pdf