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GB20V60DF - IGBT

STMicroelectronics

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Datasheet Details

Part number	GB20V60DF
Manufacturer	STMicroelectronics ↗
File Size	2.01 MB
Description	IGBT
Datasheet	GB20V60DF-STMicroelectronics.pdf

GB20V60DF Product details

Description

This device is an IGBT developed using an advanced proprietary trench gate and field stop structure.

Features

Maximum junction temperature: TJ = 175 °C.
Very high speed switching series.
Tail-less switching off.
Low saturation voltage: VCE(sat) = 1.8 V (typ. ) @ IC = 20 A.
Tight parameters distribution.
Safe paralleling.
Low thermal resistance.
Very fast soft recovery antiparallel diode.
Lead free package.

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Published: Jan 21, 2019 |