GB20V60DF Datasheet, Igbt, STMicroelectronics

GB20V60DF Features

• Igbt
• Maximum junction temperature: TJ = 175 °C
• Very high speed switching series
• Tail-less switching off
• Low saturation voltage: VCE(sat) = 1.8 V (typ.

PDF File Details

Part number:

GB20V60DF

Manufacturer:

STMicroelectronics ↗

File Size:

2.01MB

Download:

📄 Datasheet

Description:

Igbt. This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. The device is part of the "V" s

GB20V60DF Application

• Applications
• Photovoltaic inverters
• Uninterruptible power supply
• Welding
• Power factor correction
• V

TAGS

GB20V60DF

STMicroelectronics

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