GB201A
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Silicon controlled rectifiers.
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GB201 - SILICON CONTROLLED RECTIFIERS
(Digitron Semiconductors)
GA200-GA201A
High-reliability discrete products and engineering services since 1977
SILICON CONTROLLED RECTIFIERS
FEATURES Available as “HR” (hig.
GB200 - SILICON CONTROLLED RECTIFIERS
(Digitron Semiconductors)
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High-reliability discrete products and engineering services since 1977
SILICON CONTROLLED RECTIFIERS
FEATURES Available as “HR” (hig.
GB200A - SILICON CONTROLLED RECTIFIERS
(Digitron Semiconductors)
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High-reliability discrete products and engineering services since 1977
SILICON CONTROLLED RECTIFIERS
FEATURES Available as “HR” (hig.
GB200TS60NPBF - Ultrafast Speed IGBT
(Vishay Siliconix)
.DataSheet.co.kr
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Vishay High Power Products
INT-A-PAK Half-Bridge (Ultrafast Speed IGBT), 209 A
FEATURES
• Generation 5 Non Punch.
GB20B60PD1 - IRGB20B60PD1
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PD - 94613A
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WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE
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GB20NB32LZ - N-CHANNEL PowerMESH TM IGBT
(ST Microelectronics)
..
STGB20NB32LZ STGB20NB32LZ-1
N-CHANNEL CLAMPED 20A - D2PAK/I2PAK INTERNALLY CLAMPED PowerMESH™ IGBT
TYPE STGB20NB32LZ STGB20NB32LZ.
GB20NB32LZ-1 - N-CHANNEL PowerMESH TM IGBT
(ST Microelectronics)
..
STGB20NB32LZ STGB20NB32LZ-1
N-CHANNEL CLAMPED 20A - D2PAK/I2PAK INTERNALLY CLAMPED PowerMESH™ IGBT
TYPE STGB20NB32LZ STGB20NB32LZ.
GB20NC60V - very fast IGBT
(STMicroelectronics)
STGB20NC60V, STGP20NC60V, STGW20NC60V
30 A - 600 V - very fast IGBT
3 2 1
TO-247
3 1
D²PAK
3 2 1
TO-220
Figure 1. Internal schematic diagram
Data.
GB20SLT12-247 - Silicon Carbide Schottky Diode
(GeneSiC)
GB20SLT12-247
1200V 20A SiC Schottky MPS™ Diode
Silicon Carbide Schottky Diode
Features
• High Avalanche (UIS) Capability • Enhanced Surge Current Ca.
GB20V60DF - IGBT
(STMicroelectronics)
STGB20V60DF, STGP20V60DF, STGW20V60DF, STGWT20V60DF
600 V, 20 A very high speed trench gate field-stop IGBT
Datasheet - production data
TAB
TAB
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