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GB25MPS17-247 - Silicon Carbide Schottky Diode

Features

  • High Avalanche (UIS) Capability.
  • Enhanced Surge Current Capability.
  • Superior Figure of Merit QC/IF.
  • Low Thermal Resistance.
  • 175 °C Maximum Operating Temperature.
  • Temperature Independent Switching Behavior.
  • Positive Temperature Coefficient of VF.
  • Extremely Fast Switching Speeds Package Case VRRM IF (Tc = 135°C) QC Case K A K TO-247-2 A = 1700 V = 43 A = 92 nC Advantages.
  • Low Standby Power Losses.
  • Impr.

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Datasheet preview – GB25MPS17-247

Datasheet Details

Part number GB25MPS17-247
Manufacturer GeneSiC
File Size 305.80 KB
Description Silicon Carbide Schottky Diode
Datasheet download datasheet GB25MPS17-247 Datasheet
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Full PDF Text Transcription

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GB25MPS17-247 1700V 25A SiC Schottky MPS™ Diode Silicon Carbide Schottky Diode Features • High Avalanche (UIS) Capability • Enhanced Surge Current Capability • Superior Figure of Merit QC/IF • Low Thermal Resistance • 175 °C Maximum Operating Temperature • Temperature Independent Switching Behavior • Positive Temperature Coefficient of VF • Extremely Fast Switching Speeds Package Case VRRM IF (Tc = 135°C) QC Case K A K TO-247-2 A = 1700 V = 43 A = 92 nC Advantages • Low Standby Power Losses • Improved Circuit Efficiency (Lower Overall Cost) • Low Switching Losses • Ease of Paralleling without Thermal Runaway • Smaller Heat Sink Requirements • Low Reverse Recovery Current • Low Device Capacitance • Low Reverse Leakage Current Applications • Boost Diode in Power Factor Correction (PF
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