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GB25MPS17-247 - Silicon Carbide Schottky Diode

GeneSiC

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Datasheet Details

Part number	GB25MPS17-247
Manufacturer	GeneSiC
File Size	305.80 KB
Description	Silicon Carbide Schottky Diode
Datasheet	GB25MPS17-247-GeneSiC.pdf

GB25MPS17-247 Product details

Features

High Avalanche (UIS) Capability.
Enhanced Surge Current Capability.
Superior Figure of Merit QC/IF.
Low Thermal Resistance.
175 °C Maximum Operating Temperature.
Temperature Independent Switching Behavior.
Positive Temperature Coefficient of VF.
Extremely Fast Switching Speeds Package Case VRRM IF (Tc = 135°C) QC Case K A K TO-247-2 A = 1700 V = 43 A = 92 nC Advantages.
Low Standby Power Losses.
Impr.

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Published: May 6, 2019 |