Part number:
GB20SLT12-247
Manufacturer:
GeneSiC
File Size:
310.92 KB
Description:
Silicon carbide schottky diode.
GB20SLT12-247 Features
* High Avalanche (UIS) Capability
* Enhanced Surge Current Capability
* Superior Figure of Merit QC/IF
* Low Thermal Resistance
* 175 °C Maximum Operating Temperature
* Temperature Independent Switching Behavior
* Positive Temperature Coefficie
GB20SLT12-247 Datasheet (310.92 KB)
Datasheet Details
GB20SLT12-247
GeneSiC
310.92 KB
Silicon carbide schottky diode.
📁 Related Datasheet
GB200 SILICON CONTROLLED RECTIFIERS (Digitron Semiconductors)
GB200A SILICON CONTROLLED RECTIFIERS (Digitron Semiconductors)
GB200TS60NPBF Ultrafast Speed IGBT (Vishay Siliconix)
GB201 SILICON CONTROLLED RECTIFIERS (Digitron Semiconductors)
GB201A SILICON CONTROLLED RECTIFIERS (Digitron Semiconductors)
GB20B60PD1 IRGB20B60PD1 (International Rectifier)
GB20NB32LZ N-CHANNEL PowerMESH TM IGBT (ST Microelectronics)
GB20NB32LZ-1 N-CHANNEL PowerMESH TM IGBT (ST Microelectronics)
GB20SLT12-247 Distributor