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GB2X50MPS12-227

Silicon Carbide Schottky Diode

GB2X50MPS12-227 Features

* High Avalanche (UIS) Capability

* Enhanced Surge Current Capability

* Superior Figure of Merit QC/IF

* Low Thermal Resistance

* 175 °C Maximum Operating Temperature

* Temperature Independent Switching Behavior

* Positive Temperature Coefficie

GB2X50MPS12-227 Datasheet (487.10 KB)

Preview of GB2X50MPS12-227 PDF

Datasheet Details

Part number:

GB2X50MPS12-227

Manufacturer:

GeneSiC

File Size:

487.10 KB

Description:

Silicon carbide schottky diode.

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GB2X50MPS12-227 Silicon Carbide Schottky Diode GeneSiC

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