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GB2X50MPS12-227 - Silicon Carbide Schottky Diode

GeneSiC

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Datasheet Details

Part number	GB2X50MPS12-227
Manufacturer	GeneSiC
File Size	487.10 KB
Description	Silicon Carbide Schottky Diode
Datasheet	GB2X50MPS12-227-GeneSiC.pdf

GB2X50MPS12-227 Product details

Features

High Avalanche (UIS) Capability.
Enhanced Surge Current Capability.
Superior Figure of Merit QC/IF.
Low Thermal Resistance.
175 °C Maximum Operating Temperature.
Temperature Independent Switching Behavior.
Positive Temperature Coefficient of VF.
Extremely Fast Switching Speeds VRRM IF (Tc = 100°C) QC Package 1 2 4 3 SOT-227 = 1200 V = 124 A.
= 398 nC.
Advantages.
Low Standby Power Losses.
Improv.

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Published: Dec 26, 2024 |