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GB2X50MPS17-227 - Silicon Carbide Schottky Diode

GeneSiC

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Datasheet Details

Part number	GB2X50MPS17-227
Manufacturer	GeneSiC
File Size	806.76 KB
Description	Silicon Carbide Schottky Diode
Datasheet	GB2X50MPS17-227-GeneSiC.pdf

GB2X50MPS17-227 Product details

Features

Low VF for High Temperature Operation.
Enhanced Surge and Avalanche Robustness.
Superior Figure of Merit QC/IF.
Low Thermal Resistance.
Low Reverse Leakage Current.
Temperature Independent Fast Switching.
Positive Temperature Coefficient of VF.
Low VF for High Temperature Operation Package SOT-227 TM VRRM = IF (TC = 100°C) = QC = 1700 V 182 A.
1076 nC.
A A RoHS K K REACH Advantages.
Improve.

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Published: Dec 26, 2024 |