GB2X100MPS12-227 Silicon Carbide Schottky Diode

GeneSiC

Description

GB2X100MPS12-227 1200 V SiC MPS™ Diode Silicon Carbide Schottky Diode .

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GB2X100MPS12-227 Datasheet Preview — Preview of GB2X100MPS12-227 PDF

Datasheet Specifications

Part number: GB2X100MPS12-227
Manufacturer: GeneSiC
File Size: 478.79 KB
Datasheet: GB2X100MPS12-227-GeneSiC.pdf
Description: Silicon Carbide Schottky Diode

Features

* High Avalanche (UIS) Capability
* Enhanced Surge Current Capability
* Superior Figure of Merit QC/IF
* Low Thermal Resistance
* 175 °C Maximum Operating Temperature
* Temperature Independent Switching Behavior
* Positive Temperature Coefficie

Applications

* Boost Diode in Power Factor Correction (PFC)
* Switched Mode Power Supply (SMPS)
* Uninterruptible Power Supply (UPS)
* Motor Drives
* Freewheeling / Anti-parallel Diode in Inverters
* Solar Inverters & Wind Energy Converters
* Electric Vehic

GB2X100MPS12-227 Distributors

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GB2X100MPS12-227 Silicon Carbide Schottky Diode GeneSiC

GeneSiC GB2X100MPS12-227-like datasheet