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GB8NC60K

IGBT

GB8NC60K Features

* Type VCES VCE(sat)Typ @25°C IC @100°C STGB8NC60K t(s)STGD8NC60K STGP8NC60K 600V 600V 600V 2.2V 2.2V 2.2V 8A 8A 8A duc

* Lower on voltage drop (Vcesat) ro

* Lower CRES / CIES ratio (no cross-conduction Psusceptibility) te

* Very soft ultra fast recovery antiparallel diode le

* Sh

GB8NC60K General Description

PUsing the latest high voltage technology based on tea patented strip layout, STMicroelectronics has ledesigned an advanced family of IGBTs, the oPowerMESH™ IGBTs, with outstanding sperformances. The suffix “K” identifies a family boptimized for high frequency motor control Oapplications with short .

GB8NC60K Datasheet (432.43 KB)

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GB8NC60K IGBT STMicroelectronics

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