GB8NC60KD

short circuit rugged IGBT

STMicroelectronics

GB8NC60KD Features

* Lower on voltage drop (VCE(sat))

* Lower CRES / CIES ratio (no cross-conduction susceptibility)

* Very soft ultra fast recovery antiparallel diode

* Short circuit withstand time 10 µs Applications

* High frequency motor controls

* SMPS and PFC in both hard switch and resona

GB8NC60KD General Description

This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. 3 2 1 TO-220 3 2 1 TO-220FP 2 3 1 DPAK 2 3 1 D²PAK Figure 1. Internal schematic diagram Table 1. Device summary Order codes Marking STGB8NC60KDT4 GB.

GB8NC60KD Datasheet (535.46 KB)