GD10NC60HD Datasheet, Igbt, STMicroelectronics

GD10NC60HD Features

• Igbt
• Low on-voltage drop (VCE(sat))
• Low CRES / CIES ratio (no cross-conduction susceptibility)
• Very soft ultra fast recovery antiparallel diode Applications

PDF File Details

Part number:

GD10NC60HD

Manufacturer:

STMicroelectronics ↗

File Size:

747.64kb

Download:

📄 Datasheet

Description:

Very fast igbt. This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state

GD10NC60HD Application

• Applications
• High frequency motor controls
• SMPS and PFC in both hard switch and resonant topologies
• Motor drivers Desc

TAGS

GD10NC60HD

STMicroelectronics

📁 Related Datasheet

GD10NC60KD - short-circuit rugged IGBT (STMicroelectronics)
STGB10NC60KDT4, STGD10NC60KDT4, STGF10NC60KD, STGP10NC60KD 10 A, 600 V short-circuit rugged IGBT Datasheet - production data Figure 1: Internal sche.

GD10NC60S - fast IGBT (STMicroelectronics)
STGD10NC60S STGP10NC60S 10 A, 600 V fast IGBT Features ■ Optimized performance for medium operating frequencies up to 5 kHz in hard switching TAB.

GD103SD - SWITCHING DIODE (GTM)
.. ISSUED DATE :2005/01/10 REVISED DATE : GD103SD S U R F A C E M O U N T, S C H O T T K Y B A R R I E R D I O D E V O LT A G E 4 0 .

GD10HF60KD - short-circuit rugged IGBT (STMicroelectronics)
STGD10HF60KD Automotive-grade 10 A, 600 V, short-circuit rugged IGBT with Ultrafast diode Datasheet - production data TAB 3 1 DPAK Features • Desig.

GD10MPS12A - Silicon Carbide Schottky Diode (GeneSiC)
GD10MPS12A 1200V 10A SiC Schottky MPS™ Diode Silicon Carbide Schottky Diode Features • Gen4 Thin Chip Technology for Low VF • Superior Figure of Meri.

GD10MPS12E - Silicon Carbide Schottky Diode (GeneSiC)
GD10MPS12E 1200V 10A SiC Schottky MPS™ Diode Silicon Carbide Schottky Diode Features • Gen4 Thin Chip Technology for Low VF • Superior Figure of Meri.

GD10MPS12H - Silicon Carbide Schottky Diode (GeneSiC)
GD10MPS12H 1200V 10A SiC Schottky MPS™ Diode Silicon Carbide Schottky Diode Features • Gen4 Thin Chip Technology for Low VF • Superior Figure of Meri.

GD10MPS17H - Silicon Carbide Schottky Diode (GeneSiC)
GD10MPS17H 1700V 10A SiC Schottky MPS™ Diode Silicon Carbide Schottky Diode Features • Gen4 Thin Chip Technology for Low VF • Enhanced Surge and Aval.

GD10PJK120L1S - IGBT (STARPOWER)
GD10PJK120L1S STARPOWER SEMICONDUCTORTM GD10PJK120L1S Molding Type Module 1200V/10A PIM in one-package General Description STARPOWER IGBT Power Module.

GD14NC60K - IGBT (STMicroelectronics)
STGB14NC60K STGD14NC60K N-channel 14A - 600V -DPAK - D2PAK Short circuit rated PowerMESH™ IGBT General features Type STGB14NC60K STGD14NC60K VCES .