Part number: GF100N30
Manufacturer: STMicroelectronics (https://www.st.com/)
File Size: 673.99KB
Download: 📄 Datasheet
Description: IGBT
* Optimized for sustain and energy recovery circuits in PDP applications.
* State-of-the-art STripFET™ technology
* Peak collector current IRP = 330 A @
TC .
* State-of-the-art STripFET™ technology
* Peak collector current IRP = 330 A @
TC = 25 °C (see Table 2)
3 2 1.
duAdvanced high-density and high-current IGBT rotechnology with low-drop companion diode Padapted to various functions in PDP sets.
3 2 1
TO-220
Figure 1. Internal schematic diagram
lete Product(s) - ObsoleteTable 1. Device summary soOrder codes
Ob.
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Figure 1: Internal sche.
