GF100N30 IGBT

STMicroelectronics

Description

STGF100N30 STGP100N30, STGW100N30 90 A - 330 V - fast IGBT .
duAdvanced high-density and high-current IGBT rotechnology with low-drop companion diode Padapted to various functions in PDP sets.

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Datasheet Specifications

Part number: GF100N30
Manufacturer: STMicroelectronics ↗
File Size: 673.99 KB
Datasheet: GF100N30-STMicroelectronics.pdf
Description: IGBT

Applications

* State-of-the-art STripFET™ technology
* Peak collector current IRP = 330 A @ TC = 25 °C (see Table 2) 3 2 1 TO-220FP 3 2 1 TO-247
* Very low-on voltage drop (VCE(sat)) and energy per pulse for improved panel efficiency )
* High repetitive peak current capability ct(sDescriptio

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