Datasheet4U Logo Datasheet4U.com

GP18N40LZ

Automotive-grade 390V internally clamped IGBT

GP18N40LZ Features

* Designed for automotive applications and AEC-Q101 qualified

* 180 mJ of avalanche energy @ TC = 150 °C, L = 3 mH

* ESD gate-emitter protection

* Gate-collector high voltage clamping

* Logic level gate drive

* Low saturation voltage

* High pul

GP18N40LZ General Description

This application-specific IGBT utilizes the most advanced PowerMESH™ technology. The built-in Zener diodes between gate-collector and gateemitter provide overvoltage protection capabilities. The device also exhibits low on-state voltage drop and low threshold drive for use in automotive ignition sys.

GP18N40LZ Datasheet (858.10 KB)

Preview of GP18N40LZ PDF

Datasheet Details

Part number:

GP18N40LZ

Manufacturer:

STMicroelectronics ↗

File Size:

858.10 KB

Description:

Automotive-grade 390v internally clamped igbt.
7$% 7$% ,3$.      72 STGB18N40LZT4, STGD18N40LZ, STGP18N40LZ Automotive-grade 390 V internally clamped IGBT ESCIS 180 mJ Datasheet - pr.

📁 Related Datasheet

GP180 PPTC Thermistors (Goodpoly)

GP189 Batteries (GP)

GP10 Paperless Recorder (Yokogawa)

GP100 (GP100 - GP110) 1 AMP HIGH RELIABILITY SILICON DIODES (DIOTEC Electronics Corporation)

GP100 PPTC Thermistors (Goodpoly)

GP1001 Glass Passivated Rectifiers (Taiwan Semiconductor)

GP1001-7R 120...195 Watt DC-DC Converters (Power-One)

GP1002 Glass Passivated Rectifiers (Taiwan Semiconductor)

GP1003 Glass Passivated Rectifiers (Taiwan Semiconductor)

GP1004 Glass Passivated Rectifiers (Taiwan Semiconductor)

TAGS

GP18N40LZ Automotive-grade 390V internally clamped IGBT STMicroelectronics

Image Gallery

GP18N40LZ Datasheet Preview Page 2 GP18N40LZ Datasheet Preview Page 3

GP18N40LZ Distributor