GP30NC60K

IGBT

STMicroelectronics

GP30NC60K Features

* Low on-voltage drop (VCE(sat))

* Low Cres / Cies ratio (no cross conduction susceptibility) )

* Short circuit withstand time 10 µs ct(sApplications du

* High frequency inverters ro

* Motor drivers te PDescription oleThis IGBT utilizes the advanced PowerMESH™ sprocess resulting i

GP30NC60K General Description

oleThis IGBT utilizes the advanced PowerMESH™ sprocess resulting in an excellent trade-off bbetween switching performance and low on-state Obsolete Product(s) - Obehavior. 3 1 D²PAK 3 2 1 TO-220 Figure 1. Internal schematic diagram Table 1. Device summary Order codes Marking STGB30NC60KT4 GB.

GP30NC60K Datasheet (369.79 KB)