GP30V60DF

IGBT

STMicroelectronics

GP30V60DF Features

* Maximum junction temperature: TJ = 175 °C

* Tail-less switching off

* VCE(sat) = 1.85 V (typ.) @ IC = 30 A

* Tight parameters distribution

* Safe paralleling

* Low thermal resistance

* Very fast soft recovery antiparallel diode Applications

GP30V60DF General Description

This device is an IGBT developed using an advanced proprietary trench gate field stop structure. The device is part of the V series of IGBTs, which represent an optimum compromise E (3) between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore.

GP30V60DF Datasheet (1.83 MB)

GP30V60DF Datasheet Preview — Preview of GP30V60DF PDF

Datasheet Details

Part number:

GP30V60DF

Manufacturer:

STMicroelectronics ↗

File Size:

1.83 MB

Description:

Igbt.
STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DF Trench gate field-stop IGBT, V series 600 V, 30 A very high speed Datasheet - production data TA.

📁 Related Datasheet

GP30 PPTC Thermistors (Goodpoly)

GP30-090 PPTC Thermistors (Goodpoly)

GP30-110 PPTC Thermistors (Goodpoly)

GP30-135 PPTC Thermistors (Goodpoly)

GP30-160 PPTC Thermistors (Goodpoly)

GP30-185 PPTC Thermistors (Goodpoly)

GP30-250 PPTC Thermistors (Goodpoly)

GP30-300 PPTC Thermistors (Goodpoly)

GP30-400 PPTC Thermistors (Goodpoly)

GP30-500 PPTC Thermistors (Goodpoly)

TAGS

GP30V60DF IGBT STMicroelectronics

Image Gallery

GP30V60DF Features

GP30V60DF General Description

Datasheet Details

File Size:

Description:

GP30V60DF Distributor