GW100N30

IGBT

STMicroelectronics

GW100N30 Features

* Optimized for sustain and energy recovery circuits in PDP applications.

* State-of-the-art STripFET™ technology

* Peak collector current IRP = 330 A @ TC = 25 °C (see Table 2) 3 2 1 TO-220FP 3 2 1 TO-247

* Very low-on voltage drop (VCE(sat)) and energy per pulse for improved

GW100N30 General Description

duAdvanced high-density and high-current IGBT rotechnology with low-drop companion diode Padapted to various functions in PDP sets. 3 2 1 TO-220 Figure 1. Internal schematic diagram lete Product(s) - ObsoleteTable 1. Device summary soOrder codes Ob STGF100N30 Marking GF100N30 Package TO-220FP P.

GW100N30 Datasheet (673.99 KB)