Datasheet Details
- Part number
- GW100N30
- Manufacturer
- STMicroelectronics ↗
- File Size
- 673.99 KB
- Datasheet
- GW100N30-STMicroelectronics.pdf
- Description
- IGBT
GW100N30 Description
STGF100N30 STGP100N30, STGW100N30 90 A - 330 V - fast IGBT .
duAdvanced high-density and high-current IGBT rotechnology with low-drop companion diode Padapted to various functions in PDP sets.
GW100N30 Applications
* State-of-the-art STripFET™ technology
* Peak collector current IRP = 330 A @
TC = 25 °C (see Table 2)
3 2 1
TO-220FP
3 2 1
TO-247
* Very low-on voltage drop (VCE(sat)) and energy
per pulse for improved panel efficiency
)
* High repetitive peak current capability ct(sDescriptio
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