GW100N30 Datasheet, Igbt, STMicroelectronics

GW100N30 Features

• Igbt
• Optimized for sustain and energy recovery circuits in PDP applications.
• State-of-the-art STripFET™ technology
• Peak collector current IRP = 330 A @ TC = 2

PDF File Details

Part number:

GW100N30

Manufacturer:

STMicroelectronics ↗

File Size:

673.99kb

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📄 Datasheet

Description:

Igbt. duAdvanced high-density and high-current IGBT rotechnology with low-drop companion diode Padapted to various functions in PDP sets.

GW100N30 Application

• Applications
• State-of-the-art STripFET™ technology
• Peak collector current IRP = 330 A @ TC = 25 °C (see Table 2) 3 2 1 TO-220

TAGS

GW100N30

STMicroelectronics

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