GW20V60DF Datasheet (STMicroelectronics)

GW20V60DF, IGBT

This device is an IGBT developed using an advanced proprietary trench gate and field stop structure.

The device is part of the "V" series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of ver

GW20V60DF Features

* Maximum junction temperature: TJ = 175 °C

* Very high speed switching series

* Tail-less switching off

* Low saturation voltage: VCE(sat) = 1.8 V (typ.) @ IC = 20 A

* Tight parameters distribution

* Safe paralleling

* Low thermal resistance