GW20V60DF

IGBT

STMicroelectronics

GW20V60DF Features

* Maximum junction temperature: TJ = 175 °C

* Very high speed switching series

* Tail-less switching off

* Low saturation voltage: VCE(sat) = 1.8 V (typ.) @ IC = 20 A

* Tight parameters distribution

* Safe paralleling

* Low thermal resistance

GW20V60DF General Description

This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. The device is part of the "V" series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of ver.

GW20V60DF Datasheet (2.01 MB)

GW20V60DF Datasheet Preview — Preview of GW20V60DF PDF

Datasheet Details

Part number:

GW20V60DF

Manufacturer:

STMicroelectronics ↗

File Size:

2.01 MB

Description:

Igbt.
STGB20V60DF, STGP20V60DF, STGW20V60DF, STGWT20V60DF 600 V, 20 A very high speed trench gate field-stop IGBT Datasheet - production data TAB TAB 3 .

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GW20V60DF IGBT STMicroelectronics

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GW20V60DF Features

GW20V60DF General Description

Datasheet Details

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Description:

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