Datasheet4U Logo Datasheet4U.com

GW20V60DF Datasheet - STMicroelectronics

GW20V60DF-STMicroelectronics.pdf

Preview of GW20V60DF PDF
GW20V60DF Datasheet Preview Page 2 GW20V60DF Datasheet Preview Page 3

Datasheet Details

GW20V60DF, IGBT

This device is an IGBT developed using an advanced proprietary trench gate and field stop structure.

The device is part of the "V" series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of ver

GW20V60DF Features

* Maximum junction temperature: TJ = 175 °C

* Very high speed switching series

* Tail-less switching off

* Low saturation voltage: VCE(sat) = 1.8 V (typ.) @ IC = 20 A

* Tight parameters distribution

* Safe paralleling

* Low thermal resistance

📁 Related Datasheet

📌 All Tags

STMicroelectronics GW20V60DF-like datasheet