Part number:
GW30V60DF
Manufacturer:
File Size:
1.83 MB
Description:
Stgw30v60df.
GW30V60DF-STMicroelectronics.pdf
Datasheet Details
Part number:
GW30V60DF
Manufacturer:
File Size:
1.83 MB
Description:
Stgw30v60df.
GW30V60DF, STGW30V60DF
This device is an IGBT developed using an advanced proprietary trench gate field stop structure.
The device is part of the V series of IGBTs, which represent an optimum compromise E (3) between conduction and switching losses to maximize the efficiency of very high frequency converters.
Furthermore
GW30V60DF Features
* Maximum junction temperature: TJ = 175 °C
* Tail-less switching off
* VCE(sat) = 1.85 V (typ.) @ IC = 30 A
* Tight parameters distribution
* Safe paralleling
* Low thermal resistance
* Very fast soft recovery antiparallel diode Applications
📁 Related Datasheet
📌 All Tags