GW30N120KD

short circuit rugged IGBT

STMicroelectronics

GW30N120KD Features

* Low on-losses

* High current capability

* Low gate charge

* Short circuit withstand time 10 µs

* IGBT co-packaged with Ultrafast free-wheeling diode Applications

* Motor control Description This high voltage and short-circuit rugged IGBT utilizes the advanced PowerMESH™ pro

GW30N120KD General Description

This high voltage and short-circuit rugged IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low ON-state behavior. 3 2 1 TO-247 Figure 1. Internal schematic diagram Table 1. Device summary Order codes Markings STGW30N120KD GW30.

GW30N120KD Datasheet (386.09 KB)