GWT30V60DF

IGBT

STMicroelectronics

GWT30V60DF Features

* Maximum junction temperature: TJ = 175 °C

* Tail-less switching off

* VCE(sat) = 1.85 V (typ.) @ IC = 30 A

* Tight parameters distribution

* Safe paralleling

* Low thermal resistance

* Very fast soft recovery antiparallel diode Applications

GWT30V60DF General Description

This device is an IGBT developed using an advanced proprietary trench gate field stop structure. The device is part of the V series of IGBTs, which represent an optimum compromise E (3) between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore.

GWT30V60DF Datasheet (1.83 MB)

GWT30V60DF Datasheet Preview — Preview of GWT30V60DF PDF

Datasheet Details

Part number:

GWT30V60DF

Manufacturer:

STMicroelectronics ↗

File Size:

1.83 MB

Description:

Igbt.
STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DF Trench gate field-stop IGBT, V series 600 V, 30 A very high speed Datasheet - production data TA.

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