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GWT30V60DF - IGBT

STMicroelectronics

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Datasheet Details

Part number	GWT30V60DF
Manufacturer	STMicroelectronics ↗
File Size	1.83 MB
Description	IGBT
Datasheet	GWT30V60DF-STMicroelectronics.pdf

GWT30V60DF Product details

Description

This device is an IGBT developed using an advanced proprietary trench gate field stop structure.

Features

Maximum junction temperature: TJ = 175 °C.
Tail-less switching off.
VCE(sat) = 1.85 V (typ. ) @ IC = 30 A.
Tight parameters distribution.
Safe paralleling.
Low thermal resistance.
Very fast soft recovery antiparallel diode.

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Published: Jan 21, 2019 |