GWT60V60DF - Trench gate field-stop IGBT

STMicroelectronics

Datasheet Details

Part number	GWT60V60DF
Manufacturer	STMicroelectronics ↗
File Size	1.54 MB
Description	Trench gate field-stop IGBT
Datasheet	GWT60V60DF-STMicroelectronics.pdf

These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure.

Maximum junction temperature: TJ = 175 °C.
Tail-less switching off.
VCE(sat) = 1.85 V (typ. ) @ IC = 60 A.
Tight parameter distribution.
Safe paralleling.
Low thermal resistance.
Very fast soft recovery antiparallel diode 3 2 1 TO-3P Figure 1. Internal schematic diagram C (2 or TAB).

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Published: Jan 1, 2019 |