Datasheet Details
Part number:
GWT60V60DF
Manufacturer:
File Size:
1.54 MB
Description:
Trench gate field-stop IGBT
Features
* Maximum junction temperature: TJ = 175 °C
* Tail-less switching off
* VCE(sat) = 1.85 V (typ.) @ IC = 60 A
* Tight parameter distribution
* Safe paralleling
* Low thermal resistance
* Very fast soft recovery antiparallel diode 3 2 1 TO-3P Fi
GWT60V60DF-STMicroelectronics.pdf
GWT60V60DF, Trench gate field-stop IGBT
These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure.
These devices are part of the V series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters.
Furthermore,
GWT60V60DF Distributor
📁 Related Datasheet
📌 All Tags
