GWT60V60DF Datasheet - STMicroelectronics

Trench gate field-stop IGBT

GWT60V60DF Features

* Maximum junction temperature: TJ = 175 °C

* Tail-less switching off

* VCE(sat) = 1.85 V (typ.) @ IC = 60 A

* Tight parameter distribution

* Safe paralleling

* Low thermal resistance

* Very fast soft recovery antiparallel diode 3 2 1 TO-3P Fi

GWT60V60DF General Description

These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the V series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore,.

GWT60V60DF Datasheet (1.54 MB)

GWT60V60DF Datasheet Preview — Preview of GWT60V60DF PDF

Datasheet Details

Part number:

GWT60V60DF

Manufacturer:

STMicroelectronics ↗

File Size:

1.54 MB

Description:

Trench gate field-stop igbt.
STGW60V60DF, STGWA60V60DF STGWT60V60DF Trench gate field-stop IGBT, V series 600 V, 60 A very high speed Datasheet - production data 3 2 1 TO-247 TAB.

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