Datasheet4U Logo Datasheet4U.com

GWT60V60DF Datasheet - STMicroelectronics

GWT60V60DF Trench gate field-stop IGBT

These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the V series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore,.

GWT60V60DF Features

* Maximum junction temperature: TJ = 175 °C

* Tail-less switching off

* VCE(sat) = 1.85 V (typ.) @ IC = 60 A

* Tight parameter distribution

* Safe paralleling

* Low thermal resistance

* Very fast soft recovery antiparallel diode 3 2 1 TO-3P Fi

GWT60V60DF Datasheet (1.54 MB)

Preview of GWT60V60DF PDF
GWT60V60DF Datasheet Preview Page 2 GWT60V60DF Datasheet Preview Page 3

Datasheet Details

Part number:

GWT60V60DF

Manufacturer:

STMicroelectronics ↗

File Size:

1.54 MB

Description:

Trench gate field-stop igbt.

📁 Related Datasheet

GWT30V60DF IGBT (STMicroelectronics)

GWTOC1SN9G1E0 LCD (SGD)

GWTSA4SN9D1E0 LCD (SGD)

GWTW50SP9G1R0 Thin-Film-Transistor LCD (SGD)

GWTXA4VNAB1E0 LCD (SGD)

GW100L RF Modem (smart RF)

GW100N30 IGBT (STMicroelectronics)

GW128x32C-K610A VFD Module (NORITAKE ITRON)

TAGS

GWT60V60DF Trench gate field-stop IGBT STMicroelectronics

GWT60V60DF Distributor