Datasheet4U Logo Datasheet4U.com

H32N65DM6 Datasheet - STMicroelectronics

H32N65DM6 - N-channel Power MOSFET

This device combines two MOSFETs in a half-bridge topology.

The ACEPACK SMIT is a very compact and rugged power module in a surface mount package for easy assembly.

Thanks to the DBC substrate, the ACEPACK SMIT package offers low thermal resistance coupled with an isolated top-side thermal pad.

The

H32N65DM6 Features

* Order code SH32N65DM6AG VDS 650 V RDS(on) max. 97 mΩ ID 32 A

* AQG 324 qualified

* Half-bridge power module

* 650 V blocking voltage

* Fast recovery body diode

* Very low switching energies

* Low package inductance

* Dice on direct bond cop

H32N65DM6-STMicroelectronics.pdf

Preview of H32N65DM6 PDF
H32N65DM6 Datasheet Preview Page 2 H32N65DM6 Datasheet Preview Page 3

Datasheet Details

Part number:

H32N65DM6

Manufacturer:

STMicroelectronics ↗

File Size:

471.55 KB

Description:

N-channel power mosfet.

📁 Related Datasheet

📌 All Tags