The ISB35000 array series uses a high performance, low voltage, triple level metal, HCMOS 0.5 micron process to achieve sub-nanosecond internal speeds while offering very low power dissipation and high noise immunity.
The potential total gate count ranges above 1 million equivalent usable gates.
The
ISB35000 Features
* 0.5 micron triple layer metal HCMOS process featuring retrograde well technology, low resistance salicided active areas, polysilicide gates and thin metal oxide. 3.3 V optimized transistor with 5 V I/O interface capability 2 - input NAND delay of 0.210 ns (typ) with fanout = 2. Broad I/O functionali
Datasheet Details
ISB35000, ISB
345.59 KB
Hcmos structured array.
This datasheet PDF includes multiple part numbers: ISB35000, ISB.
Please refer to the document for exact specifications by model.
📁 Related Datasheet
📌 All Tags
