ISB35389 Datasheet, Array, STMicroelectronics

ISB35389 Features

• Array 0.5 micron triple layer metal HCMOS process featuring retrograde well technology, low resistance salicided active areas, polysilicide gates and thin metal oxide. 3.3 V optimized transis

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Part number:

ISB35389

Manufacturer:

STMicroelectronics ↗

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345.59kb

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📄 Datasheet

Description:

Hcmos structured array. The ISB35000 array series uses a high performance, low voltage, triple level metal, HCMOS 0.5 micron process to achieve sub-nanosecon

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ISB35389

STMicroelectronics

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