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ISB35389

HCMOS STRUCTURED ARRAY

ISB35389 Features

* 0.5 micron triple layer metal HCMOS process featuring retrograde well technology, low resistance salicided active areas, polysilicide gates and thin metal oxide. 3.3 V optimized transistor with 5 V I/O interface capability 2 - input NAND delay of 0.210 ns (typ) with fanout = 2. Broad I/O functionali

ISB35389 General Description

The ISB35000 array series uses a high performance, low voltage, triple level metal, HCMOS 0.5 micron process to achieve sub-nanosecond internal speeds while offering very low power dissipation and high noise immunity. The potential total gate count ranges above 1 million equivalent usable gates. The.

ISB35389 Datasheet (345.59 KB)

Preview of ISB35389 PDF

Datasheet Details

Part number:

ISB35389

Manufacturer:

STMicroelectronics ↗

File Size:

345.59 KB

Description:

Hcmos structured array.

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ISB35389 HCMOS STRUCTURED ARRAY STMicroelectronics

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