Datasheet4U Logo Datasheet4U.com

ISB35666

HCMOS STRUCTURED ARRAY

ISB35666 Features

* 0.5 micron triple layer metal HCMOS process featuring retrograde well technology, low resistance salicided active areas, polysilicide gates and thin metal oxide. 3.3 V optimized transistor with 5 V I/O interface capability 2 - input NAND delay of 0.210 ns (typ) with fanout = 2. Broad I/O functionali

ISB35666 General Description

The ISB35000 array series uses a high performance, low voltage, triple level metal, HCMOS 0.5 micron process to achieve sub-nanosecond internal speeds while offering very low power dissipation and high noise immunity. The potential total gate count ranges above 1 million equivalent usable gates. The.

ISB35666 Datasheet (345.59 KB)

Preview of ISB35666 PDF

Datasheet Details

Part number:

ISB35666

Manufacturer:

STMicroelectronics ↗

File Size:

345.59 KB

Description:

Hcmos structured array.

📁 Related Datasheet

ISB35000 - HCMOS STRUCTURED ARRAY (STMicroelectronics)
ISB35000 SERIES HCMOS STRUCTURED ARRAY PRELIMINARY DATA FEATURES 0.5 micron triple layer metal HCMOS process featuring retrograde well technology, lo.

ISB35083 - HCMOS STRUCTURED ARRAY (STMicroelectronics)
ISB35000 SERIES HCMOS STRUCTURED ARRAY PRELIMINARY DATA FEATURES 0.5 micron triple layer metal HCMOS process featuring retrograde well technology, lo.

ISB35130 - HCMOS STRUCTURED ARRAY (STMicroelectronics)
ISB35000 SERIES HCMOS STRUCTURED ARRAY PRELIMINARY DATA FEATURES 0.5 micron triple layer metal HCMOS process featuring retrograde well technology, lo.

ISB35166 - HCMOS STRUCTURED ARRAY (STMicroelectronics)
ISB35000 SERIES HCMOS STRUCTURED ARRAY PRELIMINARY DATA FEATURES 0.5 micron triple layer metal HCMOS process featuring retrograde well technology, lo.

ISB35208 - HCMOS STRUCTURED ARRAY (STMicroelectronics)
ISB35000 SERIES HCMOS STRUCTURED ARRAY PRELIMINARY DATA FEATURES 0.5 micron triple layer metal HCMOS process featuring retrograde well technology, lo.

ISB35279 - HCMOS STRUCTURED ARRAY (STMicroelectronics)
ISB35000 SERIES HCMOS STRUCTURED ARRAY PRELIMINARY DATA FEATURES 0.5 micron triple layer metal HCMOS process featuring retrograde well technology, lo.

ISB35389 - HCMOS STRUCTURED ARRAY (STMicroelectronics)
ISB35000 SERIES HCMOS STRUCTURED ARRAY PRELIMINARY DATA FEATURES 0.5 micron triple layer metal HCMOS process featuring retrograde well technology, lo.

ISB35484 - HCMOS STRUCTURED ARRAY (STMicroelectronics)
ISB35000 SERIES HCMOS STRUCTURED ARRAY PRELIMINARY DATA FEATURES 0.5 micron triple layer metal HCMOS process featuring retrograde well technology, lo.

TAGS

ISB35666 HCMOS STRUCTURED ARRAY STMicroelectronics

Image Gallery

ISB35666 Datasheet Preview Page 2 ISB35666 Datasheet Preview Page 3

ISB35666 Distributor