MSC81325M RF & MICROWAVE TRANSISTORS

STMicroelectronics

MSC81325M Description

MSC81325M RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS *..PRELIMINARY DATA REFRACTORY/GOLD METALLIZATION EMITTER BALLASTED RUGGEDIZED.
The MSC81325M device is a high power pulsed transistor specifically designed for DME/TACAN avionics applications.

MSC81325M Applications

* . . PRELIMINARY DATA REFRACTORY/GOLD METALLIZATION EMITTER BALLASTED RUGGEDIZED VSWR ∞:1 INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 325 W MIN. WITH 6.7 dB GAIN .400 x .400 2NLFL (S042) hermetically sealed ORDER CODE MSC81325M BRANDING 81325M PIN CONNEC

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MSC81325M Datasheet Preview — Preview of MSC81325M PDF

Datasheet Details

Part number: MSC81325M
Manufacturer: STMicroelectronics ↗
File Size: 88.35 KB
Datasheet: MSC81325M_STMicroelectronics.pdf
Description: RF & MICROWAVE TRANSISTORS

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MICROWAVE TRANSISTORS STMicroelectronics

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