* Order code Frequency VDD POUT Gain Efficiency RF5L08350CB4 860 MHz 50 V 400 W 19 dB 61%
* High efficiency and linear gain operations
* Integrated ESD protection
* Internally matched for ease of use
* Large positive and negative gate-source voltage range f
RF5L08350CB4 Datasheet (1.15 MB)
RF5L08350CB4
1.15 MB
Rf power ldmos transistor.
RF5L08350CB4
Datasheet
400 W, 50 V, 0.4 to 1 GHz RF power LDMOS transistor
1 2
5 4 3
B4E
Pin connection
Pin
Connection
1
Drain A
2
Drain B
3
.
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