RF5L08600CB4 - RF power LDMOS transistor

Product Overview

STMicroelectronics

Datasheet Details

Part number	RF5L08600CB4
Manufacturer	STMicroelectronics
File Size	1.98 MB
Description	RF power LDMOS transistor
Datasheet	RF5L08600CB4 Datasheet
Additional preview pages of the RF5L08600CB4 datasheet.

Product details

Description

The RF5L08600CB4 is a 650 W, 50 V, high performance, internally matched LDMOS FET, designed for multiple applications in the frequency range from 0.4 to 1 GHz.

Features

Order code Frequency VDD POUT Gain Efficiency RF5L08600CB4 650 MHz 50 V 650 W 19.5 dB 67%.
High efficiency and linear gain operations.
Integrated ESD protection.
Internally matched pair transistors in push-pull configuration.
Large positive and negative gate-source voltage range for improved class C operation.
Excellent thermal stability, low HCI drift.
In compliance with the european directive 2002/95/EC.

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Published: Mar 19, 2023 |