* Order code Frequency VDD POUT Gain Efficiency RF5L08600CB4 650 MHz 50 V 650 W 19.5 dB 67%
* High efficiency and linear gain operations
* Integrated ESD protection
* Internally matched pair transistors in push-pull configuration
* Large positive and negativ
RF5L08600CB4 Datasheet (1.98 MB)
RF5L08600CB4
1.98 MB
Rf power ldmos transistor.
RF5L08600CB4
Datasheet
650 W, 50 V, 0.4 to 1 GHz RF power LDMOS transistor
1
2 5
4
3 D4E
Pin connection
Pin
Connection
1
Drain A
2
Drain B
.
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