RF5L08600CB4 Datasheet (STMicroelectronics)

RF5L08600CB4, RF power LDMOS transistor

The RF5L08600CB4 is a 650 W, 50 V, high performance, internally matched LDMOS FET, designed for multiple applications in the frequency range from 0.4 to 1 GHz.

Product status link RF5L08600CB4 Product summary Order code RF5L08600CB4 Marking 5L08600 Package D4E Packing Tray Base/bulk quant

RF5L08600CB4 Features

* Order code Frequency VDD POUT Gain Efficiency RF5L08600CB4 650 MHz 50 V 650 W 19.5 dB 67%

* High efficiency and linear gain operations

* Integrated ESD protection

* Internally matched pair transistors in push-pull configuration

* Large positive and negativ