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SD56060 RF power transistor

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Description

SD56060 RF power transistor from the LdmoST family of N-channel enhancement-mode lateral MOSFETs Datasheet - target specification .
The device is a common source N-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial app.

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Features

* Excellent thermal stability
* Common source configuration Push-pull
* POUT = 60 W with 16 dB gain @ 860 MHz

Applications

* at frequencies up to 1 GHz. It is designed for high gain and broadband performance operating in common source mode at 28 V. It is ideal for applications from 1 to 1000 MHz. 'UDLQ 
* DWH   6RXUFH Order code SD56060 Table 1. Device summary Package M246 Branding SD56060 June 2015

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