ST50V10100 RF Power LDMOS transistor

STMicroelectronics

Description

ST50V10100 Datasheet RF Power LDMOS transistor for frequencies up to 1.5 GHz M243 Epoxy sealed 1 1.Drain 2.Gate 3.Source 2 3 GADG310120180952IG.
The ST50V10100 is a common source N-channel enhancement-mode lateral field effect RF power transistor designed for broadband commercial, Avionics and.

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Datasheet Specifications

Part number: ST50V10100
Manufacturer: STMicroelectronics ↗
File Size: 321.06 KB
Datasheet: ST50V10100-STMicroelectronics.pdf
Description: RF Power LDMOS transistor

Features

* Order code FREQ VDD POUT (typ. ) Gain ST50V10100 1000 MHz 50 V 100 W 18 dB
* High efficiency and linear gain operations
* Integrated ESD protection
* Large positive and negative gate/source voltage range
* In compliance with the European Directive 2002/95/EC N

Applications

* Industrial, scientific and medical from HF to 1.5 GHz

ST50V10100 Distributors

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ST50V10100 Power LDMOS transistor STMicroelectronics

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