ST50V10200 Datasheet - STMicroelectronics

ST50V10200 RF power LDMOS transistor

The ST50V10200 is a common-source N-channel enhancement-mode lateral fieldeffect RF power transistor designed for broadband commercial, avionics and industrial applications at frequencies up to 1.5 GHz. It can be used in A/AB and C classes for all typical modulation formats. Product status link ST5.

ST50V10200 Features

* Order code FREQ VDD POUT (typ.) Gain ST50V10200 1000 MHz 50 V 200 W 18 dB

* High efficiency and linear gain operations

* Integrated ESD protection

* Large positive and negative gate/source voltage range

* In compliance with the European Directive 2002/95/EC N

ST50V10200 Datasheet (322.19 KB)