ST50V10200 RF power LDMOS transistor

STMicroelectronics

Description

ST50V10200 Datasheet RF power LDMOS transistor for frequencies up to 1.5 GHz M246 12 1-2 Drain 4-5 Gate 5 3 4 3 Source .
The ST50V10200 is a common-source N-channel enhancement-mode lateral fieldeffect RF power transistor designed for broadband commercial, avionics and i.

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Datasheet Specifications

Part number: ST50V10200
Manufacturer: STMicroelectronics ↗
File Size: 322.19 KB
Datasheet: ST50V10200-STMicroelectronics.pdf
Description: RF power LDMOS transistor

Features

* Order code FREQ VDD POUT (typ. ) Gain ST50V10200 1000 MHz 50 V 200 W 18 dB
* High efficiency and linear gain operations
* Integrated ESD protection
* Large positive and negative gate/source voltage range
* In compliance with the European Directive 2002/95/EC N

Applications

* Broadband communications
* Industrial, scientific and medical (ISM)

ST50V10200 Distributors

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ST50V10200 power LDMOS transistor STMicroelectronics

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