ST93CS66 Datasheet (STMicroelectronics) - (ST93CS66 / ST93CS67) 4K 256 x 16 SERIAL MICROWIRE EEPROM

ST93CS66, (ST93CS66 / ST93CS67) 4K 256 x 16 SERIAL MICROWIRE EEPROM

The ST93CS66 and ST93CS67 are 4K bit Electrically Erasable Programmable Memory (EEPROM) fabricated with SGS-THOMSON’s High Endurance Single Polysilicon CMOS technology.

The memory is accessed through a serial input D and output Q.

The 4K bit memory is organized as 256 x 16 bit words.The memory is ac

www.DataSheet4U.com ST93CS66 ST93CS67 4K (256 x 16) SERIAL MICROWIRE EEPROM NOT FOR NEW DESIGN 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION SELF-TIMED PROGRAMMING CYCLE with AUTO-ERASE READY/BUSY SIGNAL DURING PROGRAMMING SINGLE SUPPLY VOLTAGE 3V to 5.5V for the ST93CS66 2.5V to 5.5V for the ST93CS67 USER DEFINED WRITE PROTECTED AREA PAGE WRITE MODE (4 WORDS) SEQUENTIAL READ OPERATION 5ms TYPICAL PROGRAMMING TIME ST93CS66 and ST93CS67 are replaced by the M93S6