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STAC3932F

RF power transistors

STAC3932F Features

* Excellent thermal stability

* Common source push-pull configuration

* POUT = 580 W typ. with 24.6 dB gain @ 123 MHz

* In compliance with the 2002/95/EC European directive Description The STAC3932F is a N-channel MOS field-effect RF power transistor. It is intended for use in 100 V

STAC3932F General Description

The STAC3932F is a N-channel MOS field-effect RF power transistor. It is intended for use in 100 V DC large signal applications up to 250 MHz. STAC244F Air cavity !-V Figure 1. Pin connection 2 1. Drain 2. Gate 1 1 2 3 3. Source (Bottom side) !-V Table 1. Device summary Order c.

STAC3932F Datasheet (409.47 KB)

Preview of STAC3932F PDF

Datasheet Details

Part number:

STAC3932F

Manufacturer:

STMicroelectronics ↗

File Size:

409.47 KB

Description:

Rf power transistors.

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STAC3932F power transistors STMicroelectronics

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