STB24N60DM2 Datasheet - STMicroelectronics

N-Channel Power MOSFET

STB24N60DM2 Features

* Order codes STB24N60DM2 STP24N60DM2 STW24N60DM2 VDS @ TJmax 650 V RDS(on) max ID 0.20 Ω 18 A

* Extremely low gate charge and input capacitance

* Lower RDS(on) x area vs previous generation

* Low gate input resistance

* 100% avalanche tested

* Zener-prote

STB24N60DM2 General Description

These FDmesh II Plus™ low Qg Power MOSFETs with intrinsic fast-recovery body diode are produced using a new generation of MDmesh™ S(3) AM01476v1 technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of .

STB24N60DM2 Datasheet (668.20 KB)

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Datasheet Details

Part number:

STB24N60DM2

Manufacturer:

STMicroelectronics ↗

File Size:

668.20 KB

Description:

N-channel power mosfet.
STB24N60DM2, STP24N60DM2, STW24N60DM2 N-channel 600 V, 0.175 Ω typ., 18 A FDmesh II Plus™ low Qg 2 Power MOSFETs in D PAK, TO-220 and TO-247 packages .

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STB24N60DM2 Features

STB24N60DM2 General Description

Datasheet Details

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