STB24N60DM2 - N-Channel Power MOSFET

STMicroelectronics

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Datasheet Details

Part number	STB24N60DM2
Manufacturer	STMicroelectronics
File Size	668.20 KB
Description	N-Channel Power MOSFET
Datasheet	STB24N60DM2-STMicroelectronics.pdf

STB24N60DM2 Product details

Description

These FDmesh II Plus™ low Qg Power MOSFETs with intrinsic fast-recovery body diode are produced using a new generation of MDmesh™ S(3) AM01476v1 technology: MDmesh II Plus™ low Qg.These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of the world's lowest

Features

Order codes STB24N60DM2 STP24N60DM2 STW24N60DM2 VDS @ TJmax 650 V RDS(on) max ID 0.20 Ω 18 A.
Extremely low gate charge and input capacitance.
Lower RDS(on) x area vs previous generation.
Low gate input resistance.
100% avalanche tested.
Zener-protected.
Extremely high dv/dt and avalanche capabilities.

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Published: Dec 28, 2016 |