STD1NK60-1 - N-CHANNEL MOSFET
This high voltage device is an N-channel Power MOSFET developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™.
In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for t
STD1NK60-1 Features
* TAB Order code VDS RDS(on) max. ID PTOT STD1NK60-1 600 V 8.5 Ω 1 A 30 W IPAK 3 2 1 Figure 1: Internal schematic diagram D(2, TAB) G(1) S(3)
* Extremely high dv/dt capability
* ESD improved capability
* 100% avalanche tested
* Gate charge minimized Applications
* Low p
