STD1NK60-1 Datasheet - STMicroelectronics

STD1NK60-1 N-CHANNEL MOSFET

This high voltage device is an N-channel Power MOSFET developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for t.

STD1NK60-1 Features

* TAB Order code VDS RDS(on) max. ID PTOT STD1NK60-1 600 V 8.5 Ω 1 A 30 W IPAK 3 2 1 Figure 1: Internal schematic diagram D(2, TAB) G(1) S(3)

* Extremely high dv/dt capability

* ESD improved capability

* 100% avalanche tested

* Gate charge minimized Applications

* Low p

STD1NK60-1_STMicroelectronics.pdf