STD1NA60 Datasheet - ST Microelectronics

STD1NA60 N-CHANNEL POWER MOSFET

STD1NA60 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STD1NA60 s s s s s V DSS 600 V R DS( on) < 8Ω ID 1.6 A s s TYPICAL RDS(on) = 7.2 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC APPLICATION ORIENTED CHARACTERIZATION THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX ”-1”) SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX ”T4”) 3 1 IPAK TO-251 (Suffix ”-1”) 2 1 DPAK TO-252 3 (Suffix ”T4”) APPLICATIONS HIGH SP.

STD1NA60_STMicroelectronics.pdf