STD20P3H6AG Datasheet (STMicroelectronics)

STD20P3H6AG, P-CHANNEL POWER MOSFET

This device is a P-channel Power MOSFET developed using the STripFET™ F6 technology, with a new trench gate structure.

The resulting Power MOSFET exhibits very low RDS(on) in all packages.

S(3) Order code STD20P3H6AG AM11258v1 Table 1: Device summary Marking Package 20P3H6 DPAK Packing Tape

STD20P3H6AG Features

* Order code STD20P3H6AG VDS -30 V RDS(on) max. 50 mΩ ID -20 A

* Designed for automotive applications and AEC-Q101 qualified

* Very low on-resistance

* Very low gate charge

* High avalanche ruggedness

* Low gate drive power loss Applications

* Switching applications Descrip