STD26P3LLH6 Datasheet (STMicroelectronics)

STD26P3LLH6, P-CHANNEL POWER MOSFET

This device is a P-channel Power MOSFET th developed using the 6 generation of STripFET™ DeepGATE™ technology, with a new gate structure.

The resulting Power MOSFET exhibits the lowest RDS(on) in all packages S(3) AM11258v1 Order code STD26P3LLH6 Table 1.

Device summary Marking Package 26P3L

STD26P3LLH6 Features

* TAB 23 1 DPAK Figure 1. Internal schematic diagram D(2 or TAB) G(1) Order code VDSS RDS(on) max ID STD26P3LLH6 30 V 0.030 Ω(1) 12 A 1. @ VGS= 10 V

* RDS(on)

* Qg industry benchmark

* Extremely low on-resistance RDS(on)

* High avalanche ruggedness

* Low gate