Description
STD3PS25 - STD3PS25-1 P-CHANNEL 250V - 2.1Ω - 3A DPAK/IPAK MESH OVERLAY™ MOSFET TYPE VDSS RDS(on) ID STD3PS25 STD3PS25-1 250 V 250 V < 2.8 Ω < .
Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performance.
Features
* OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener volta
Applications
* INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS s CONSUMER
s LIGHTING
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
VGS Gate- source Voltage
ID Drain Current (continuous) at TC = 25°C
ID Drain Current (continuous) at TC = 100°C