STD5N60DM2

N-CHANNEL POWER MOSFET

STMicroelectronics

STD5N60DM2 Features

* Order code VDS RDS(on) max. ID PTOT STD5N60DM2 600 V 1.55 Ω 3.5 A 45 W Figure 1: Internal schematic diagram

* Fast-recovery body diode

* Extremely low gate charge and input capacitance

* Low on-resistance

* 100% avalanche tested

* Extremely high dv/dt ruggedness

* Ze

STD5N60DM2 General Description

This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shi.

STD5N60DM2 Datasheet (368.18 KB)