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STDRIVEG600W High voltage half-bridge gate driver

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Description

STDRIVEG600W Datasheet High voltage half-bridge gate driver for GaN transistors Product status link STDRIVEG600W wafer .
The STDRIVEG600W is a single chip half-bridge gate driver for Enhancement mode GaN FETs or N-channel power MOSFET.

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Features

* dV/dt immunity ±200 V/ns
* Driver current capability:
* 1.3/2.4 A source/sink typ @ 25 °C, 6 V
* 5.5/6 A source/sink typ @ 25 °C, 15 V
* Separated turn on and turn off gate driver pins
* 45 ns propagation delay with tight matching
* 3.3 V, 5

Applications

* High-voltage PFC, DC-DC and DC-AC converters
* Switch-mode power supplies
* UPS systems
* Solar power

STDRIVEG600W Distributors

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