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STDRIVEG600W Datasheet - STMicroelectronics

STDRIVEG600W High voltage half-bridge gate driver

The STDRIVEG600W is a single chip half-bridge gate driver for Enhancement mode GaN FETs or N-channel power MOSFET. The high-side section is designed to stand a voltage up to 600 V and is suitable for designs with bus voltage up to 500 V. The device is designed for driving high-speed GaN and Si FETs .

STDRIVEG600W Features

* dV/dt immunity ±200 V/ns

* Driver current capability:

* 1.3/2.4 A source/sink typ @ 25 °C, 6 V

* 5.5/6 A source/sink typ @ 25 °C, 15 V

* Separated turn on and turn off gate driver pins

* 45 ns propagation delay with tight matching

* 3.3 V, 5

STDRIVEG600W Datasheet (464.88 KB)

Preview of STDRIVEG600W PDF

Datasheet Details

Part number:

STDRIVEG600W

Manufacturer:

STMicroelectronics ↗

File Size:

464.88 KB

Description:

High voltage half-bridge gate driver.

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STDRIVEG600W High voltage half-bridge gate driver STMicroelectronics

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