STDRIVEG600W Datasheet (STMicroelectronics) - High voltage half-bridge gate driver

STDRIVEG600W, High voltage half-bridge gate driver

The STDRIVEG600W is a single chip half-bridge gate driver for Enhancement mode GaN FETs or N-channel power MOSFET.

The high-side section is designed to stand a voltage up to 600 V and is suitable for designs with bus voltage up to 500 V.

The device is designed for driving high-speed GaN and Si FETs

STDRIVEG600W Features

* dV/dt immunity ±200 V/ns

* Driver current capability:

* 1.3/2.4 A source/sink typ @ 25 °C, 6 V

* 5.5/6 A source/sink typ @ 25 °C, 15 V

* Separated turn on and turn off gate driver pins

* 45 ns propagation delay with tight matching

* 3.3 V, 5