STFI13N60M2 - N-CHANNEL POWER MOSFET
These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg.
These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge.
They are therefo
STFI13N60M2 Features
* 3 2 1 TO-220FP 1 23 I2PAKFP (TO-281) Figure 1. Internal schematic diagram AM15572v1 Order codes VDS @ TJmax RDS(on) max ID STF13N60M2 STFI13N60M2 650 V 0.38 Ω 11 A
* Extremely low gate charge
* Lower RDS(on) x area vs previous generation
* Low gate input resistance
