STFI13NM60N - N-Channel Power MOSFET
This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology.
This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.
It is therefore suitable for the most
STFI13NM60N Features
* Type VDSS RDS(on) (@Tjmax) max ID PTOT STFI13NM60N 650 V < 0.36 Ω 11 A 25 W
* Fully insulated and low profile package with increased creepage path from pin to heatsink plate
* 100% avalanche tested
* Low input capacitance and gate charge
* Low gate input resistance Applicati
