STFI13NM60N Datasheet - STMicroelectronics

N-Channel Power MOSFET

STFI13NM60N Features

* Type VDSS RDS(on) (@Tjmax) max ID PTOT STFI13NM60N 650 V < 0.36 Ω 11 A 25 W

* Fully insulated and low profile package with increased creepage path from pin to heatsink plate

* 100% avalanche tested

* Low input capacitance and gate charge

* Low gate input resistance Applicati

STFI13NM60N General Description

This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most .

STFI13NM60N Datasheet (776.68 KB)