STFW8N120K5

N-channel MOSFET

STMicroelectronics

STFW8N120K5 Features

* 3 2 1 Order code VDS RDS(on) max. STFW8N120K5 1200 V 2.00 Ω

* Industry’s lowest RDS(on) x area

* Industry’s best FoM (figure of merit)

* Ultra-low gate charge

* 100% avalanche tested

* Zener-protected ID 6A PTOT 48 W TO-3PF D(2) Applications

STFW8N120K5 General Description

This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 G(1) technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. S(3.

STFW8N120K5 Datasheet (298.53 KB)