STK22N6F3

N-Channel Power MOSFET

STMicroelectronics

STK22N6F3 Features

* Type VDSS RDS(on) max STK22N6F3 60 V < 0.006 Ω t(s)

* Ultra low top and bottom junction to case thermal resistance uc

* Extremely low on-resistance RDS(on) d

* Very low switching gate charge Pro t(s)

* Fully encapsulated die

* 100% matte tin finish (in compliance with the

STK22N6F3 General Description

rod - This STripFET™ III Power MOSFET technology P t(s) is among the latest improvements, which have been especially tailored to minimize on-state te c resistance providing superior switching sole rodu performances. PolarPAK® Figure 1. Internal schematic diagram Bottom View Top View Ob olete P .

STK22N6F3 Datasheet (830.23 KB)