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STK224N4F7AG - Automotive-grade N-channel Power MOSFET

General Description

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

Key Features

  • Order code STK224N4F7AG V DS 40 V RDS(on) max 1.5 mΩ.
  • AEC-Q101 qualified.
  • Among the lowest RDS(on) on the market.
  • Excellent FoM (figure of merit).
  • Low Crss/Ciss ratio for EMI immunity.
  • High avalanche ruggedness.

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Full PDF Text Transcription (Reference)

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STK224N4F7AG Datasheet Automotive-grade N-channel 40 V, 1.2 mΩ typ., 100 A STripFET™ F7 Power MOSFET in a LFPAK 5x6 package TAB 4 3 2 1 LFPAK 5x6 D(TAB) Features Order code STK224N4F7AG V DS 40 V RDS(on) max 1.5 mΩ • AEC-Q101 qualified • Among the lowest RDS(on) on the market • Excellent FoM (figure of merit) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness Applications • Switching applications ID 100 A G(4) Description S(1, 2, 3) This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.