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STK22N6F3 - N-Channel Power MOSFET

General Description

te c resistance providing superior switching sole rodu performances.

PolarPAK® Figure 1.

Key Features

  • Type VDSS RDS(on) max STK22N6F3 60 V < 0.006 Ω t(s).
  • Ultra low top and bottom junction to case thermal resistance uc.
  • Extremely low on-resistance RDS(on) d.
  • Very low switching gate charge Pro t(s).
  • Fully encapsulated die.
  • 100% matte tin finish (in compliance with the lete uc 2002/95/EC european directive) d.
  • High avalanche ruggedness so ro.
  • PolarPAK® is a trademark of VISHAY - Ob te P.

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STK22N6F3 N-channel 60 V, 0.0055 Ω, 22 A, PolarPAK® STripFET™ Power MOSFET Features Type VDSS RDS(on) max STK22N6F3 60 V < 0.006 Ω t(s) ■ Ultra low top and bottom junction to case thermal resistance uc ■ Extremely low on-resistance RDS(on) d ■ Very low switching gate charge Pro t(s) ■ Fully encapsulated die ■ 100% matte tin finish (in compliance with the lete uc 2002/95/EC european directive) d ■ High avalanche ruggedness so ro ■ PolarPAK® is a trademark of VISHAY - Ob te P Application t(s) ole ■ Switching applications uc Obs Description rod - This STripFET™ III Power MOSFET technology P t(s) is among the latest improvements, which have been especially tailored to minimize on-state te c resistance providing superior switching sole rodu performances. PolarPAK® Figure 1.